紧缩型SOI多模干涉光开关的设计  

Design of a Compact Multimode Interference Optical Switch in Silicon-on-Insulator

作　　者：王章涛[1] 余金中[1] 

机构地区：[1]集成光电子国家重点联合实验室中国科学院半导体研究所,北京100083

出　　处：《光电子．激光》2003年第9期897-900,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(69896260;69990540);国家"973"资助项目(G20000366)

摘　　要：提出了一种新的紧缩型SOI多模干涉(MMI)光开关。开关由单模输入输出波导和MMI耦合器组成。通过在多模波导区域引入调制区,利用Si的等离子色散效应(PDE)改变调制区的折射率来实现开关动作。用FD BPM方法对开关的工作原理和性能进行了模拟与分析。结果表明,光开关良好的综合性能,而整个开关的长度只有7mm。A novel compact multimode interference (MMI) optical switch in silicon-on-insulator (SOI) was presented. The switch compose of single-mode input and output waveguide and multimode waveguide. The switch realizes its functions by the modulation of the index of modulated-area at the center of multimode through the plasma dispersion effect (PDE). The principle and characteristics of the switch were simulated and analyzed through the finite difference beam propagation method (FD-BPM). The results show that the switch has excellent properties. The total length of the switch is only 7 mm.

关 键 词：SOI 多模干涉光开关 多模干涉耦合器 单模输入输出波导 等离子色散效应 

分 类 号：TN256[电子电信—物理电子学]