0-3型(Ba_(1-x-y)Sr_xPb_y)(Mn,Ti)O_3铁电厚膜的制备与表征  

Fabrication and Characterization of 0-3-type MPBST Ferroelectric Thick Film

作　　者：刘少波[1] 李艳秋[1] 刘梅冬[2] 曾亦可[2] 

机构地区：[1]中国科学院电工研究所微纳加工部,北京100080 [2]华中科技大学电子系,武汉430074

出　　处：《微细加工技术》2003年第3期31-36,共6页Microfabrication Technology

基　　金：国家863计划资助项目(2003AA404150)

摘　　要：铁电纳米超细粉体的合成与分散技术是成功制备0-3型铁电厚膜的关键和难点之一。采用Sol-Gel技术可制备呈球形软团聚、钙钛矿相结构完整的30nm～70nmMPBST超细粉体,以及致密无裂纹、表面光洁和铁电性能优良(Pr=3.8μC/cm2)的0-3型铁电厚膜。通过TEM、XRD、TGA-DTA、AFM等手段分析了Sol-Gel工艺的化学机制和热演化历程,结果表明:采用以乙二醇乙醚为主要溶剂的Sol-Gel技术可降低MPBST粉体/厚膜的合成温度,提高粉体均匀性和晶相结构单一性。The synthesis and dispersion of ferroelectric nanopowder is one of key technologies for the 03type thick films preparation. MPBST ferroelectric nanopowder whose grain size is about 30nm～70nm has been successfully derived from SolGel technique. It exhibits spheroid and loose accumulation with a pure perovskite phase structure. The typical 0-3 thick film with smooth surface no cracks and excellent ferroelectricity(Pr is 3.8μC/cm2) is also prepared by Sol-Gel technique.TEM,XRD,TGADTA and AFM are employed to analyze the thermal course and chemical mechanism of SolGel technique. The results show that using Ethylene glycol monoethyl ether (C2H5OC2H4OH) as main solvent the technique can effectively decrease the synthesize temperature of MPBST powder and thick film, and increase homogenization and crystallization purity of the powder.

关 键 词：0-3型铁电厚膜 Sol-Gel技术 铁电纳米超细粉体 合成温度 均匀性 晶相结构 

分 类 号：TN304.055[电子电信—物理电子学]