一种新的HEMT小信号模型参数提取方法  

A New Parameter-extraction Method for HEMT's Small-signal Model

作　　者：胡建萍[1] 程海燕[1] 陈显萼[1] 

机构地区：[1]杭州电子工业学院电子信息分院,杭州310037

出　　处：《微波学报》2003年第3期39-42,共4页Journal of Microwaves

基　　金："九五"电科院军事预研基金项目 (HD9670 6)

摘　　要：介绍了一种高电子迁移率晶体管 (HEMT)的小信号参数提取方法———综合多偏置点优化参数提取法。该文首先推导并提出了器件的模型、确定外部参数和内部参数 ,其次介绍了多偏置点优化算法。最后 ,以PHEMT器件为例进行鲁棒性和精确性测试 ,实验采用一系列随机起始值 ,结果表明 ,提取的参数值与经验值相差小于 1%。A multibias optimizing parameter extraction technique for high electron mobility transistor (HEMT) small signal model is described. Firstly, HEMT's small signal equivalent circuit is introduced, determining intrinsic and extrinsic elements. Secondly, a multibias decomposition based optimization method is presented. Lastly, robustness and accuracy tests, with a different set of random initial values , are performed on measured S parameters of a PHEMT device. Results indicate that the extracted parameters typically vary by less than 1%.

关 键 词：HEMT 高电子迁移率晶体管 小信号模型 参数提取 多偏置点优化算法 

分 类 号：TN32[电子电信—物理电子学]