(Zr_(0.8)Sn_(0.2))TiO_4陶瓷预烧和烧结工艺研究  

Study on the Calcination and Sintering Technique of (Zr_(0.8)Sn_(0.2))TiO_4 Ceramics

作　　者：王国庆[1] 吴顺华[1] 颜海洋[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《压电与声光》2003年第4期321-324,共4页Piezoelectrics & Acoustooptics

摘　　要：研究了预烧和烧结工艺对(Zr0.8Sn0.2)TiO4系统陶瓷材料介电性能的影响,发现预烧温度对介电常数ε影响不大,但预烧温度过高或过低会使介电损耗tanδ增大;在一定范围内提高烧结温度能使ε增加,但烧结温度过高或过低会使tanδ增大。XRD分析表明,在1100°C预烧,1150°C烧结的该系统主晶相是(Zr0.8Sn0.2)TiO4。该系统具有优良的介电性能(1MHz):ε≈38,tanδ≤10-4,体电阻率ρv≥1013·cm,温度系数αc=0±30×10-6/°C。The effects of calcination and sintering technique on the dielectric properties of (Zr08Sn02)TiO4 system ceramics were investigated. It was found that ε is not significantly affected by calcination temperature,but tan δ may increase if the calcination temperature is too high or too low. A higher sintering temperature within certain range produces higherε, but tan δ may increase if the sintering temperature is too high or too low. XRD analysis indicated that the main crystal phase of the system calcinated at 1 100 °C and sintered at 1 150 °C is (Zr08Sn02)TiO4. The system has excellent dielectric properties (1 MHz) as follows:ε≈38, tan δ≤104, ρv≥1013Ω·cm, αc=0±30 ×10-6/°C.

关 键 词：(Zr0.8Sn0.2)TiO4 预烧 烧结 介电性能 

分 类 号：TQ174[化学工程—陶瓷工业]