半导体器件动力模型的有限元法仿真与分析  

Simulation & Analysis of a Hydrodynamic Model of Semiconductor Devices by a Finite Element Method

作　　者：徐宁[1] 杨庚[1] 

机构地区：[1]南京邮电学院,江苏南京210003

出　　处：《计算机仿真》2003年第9期53-55,93,94,共5页Computer Simulation

基　　金：国家高性能计算基金资助项目(99127)

摘　　要：该文采用有限元方法对动力模型进行了数值仿真。首先推导出模型方程,然后根据将要采用的数值方法提出了新的变量替换关系和无量纲化参数,再讨论了一般器件的边界条件,最后对具有亚微米级的GaAsMESFET进行了数值仿真,数值结果表明在一定的条件下,电子的流动具有跨音速特征。An hydrodynamic model of semiconductor device is simulated by a finite element method. First, the model is presented briefly. Then some scaling factors and a relation of changing variables are proposed. After that, ome boundary conditions are also discussed. Finally, A GaAs metal semiconductor field effect transistor is simulated and results are analyzed. Numerical results show that electronic fluids are transonic under some conditions.

关 键 词：半导体器件 动力模型 有限元法 仿真 计算机仿真 数值仿真 

分 类 号：TN303[电子电信—物理电子学] TP391.9[自动化与计算机技术—计算机应用技术]