一种新型结构的光电负阻器件  

A Novel Silicon Photoelectric Negative Resistance Device

作　　者：李丹[1] 李树荣[1] 夏克军[1] 郭维廉[1] 郑云光[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《Journal of Semiconductors》2003年第10期1078-1083,共6页半导体学报（英文版）

摘　　要：提出了一种新型结构的硅光电负阻器件———光电双耦合区晶体管 (photoelectricdualcoupledareatransistor,PDUCAT) ,它是由一个P+ N结光电二极管和位于两侧的两个纵向NPN管构成的 .由于两个NPN管到光电二极管的距离不同 ,使得它们对光生空穴电流的争抢能力随外加电压的变化产生差异 ,同时两个NPN管电流放大系数相差较大 ,最终导致器件负阻现象的出现 .文中对PDUCAT进行了工艺模拟和器件模拟 ,围绕着负阻的形成机理和影响器件性能的主要参数进行了讨论 ,初步建立了器件模型 .A novel silicon photoelectric negative resistance device--photoelectric dual coupled areas transistor (PDUCAT) is proposed,which is composed of a P +N photoelectric diode and two vertical NPN transistors beside the diode oppositely.The difference between the abilities of extraction of the photo generated hole current changes when the bias voltage varies according to the two transistors' different distances from the diode,meanwhile the current gains of the two transistors are different.The negative resistance is mainly attributed to these two points.Process and device simulations are made respectively.The principal of PDUCAT and effects of its main parameters are further discussed and the primary device model is established.

关 键 词：光电器件 负阻 模拟 晶体管 

分 类 号：TN364.3[电子电信—物理电子学]