Al_2O_3栅介质的制备工艺及其泄漏电流输运机制  

Fabrication Process and Leakage Current Conduction Mechanisms of Al_2O_3 Gate Dielectric Thin Films

作　　者：任驰[1] 杨红[1] 韩德栋[1] 康晋锋[1] 刘晓彦 韩汝琦[1] 

机构地区：[1]北京大学微电子学研究所,北京100871

出　　处：《Journal of Semiconductors》2003年第10期1109-1114,共6页半导体学报（英文版）

基　　金：国家重点基础研究专项经费资助项目 (No .G2 0 0 0 0 36 5 0 0 )~~

摘　　要：利用室温下反应磁控溅射结合炉退火的方法在P Si(10 0 )衬底上制备了Al2 O3 栅介质层 ,研究了不同的溅射气氛和退火条件对Al2 O3 栅介质层物理特性的影响 .结果表明 :在较高温度下N2 气氛中退火有助于减小泄漏电流 ;在O2 气氛中退火有助于减少Al2 O3 栅介质中的氧空位缺陷 .对Al2 O3 栅介质泄漏电流输运机制的分析表明 ,在电子由衬底注入的情况下 ,泄漏电流主要由Schottky发射机制引起 ,而在电子由栅注入的情况下 ,泄漏电流可能由Schot tky发射和Frenkel Poole发射两种机制共同引起 .Al 2O 3 gate dielectric thin films are deposited on P-Si(100) substrate by the method of reacting magnetron sputtering and furnace annealing.The impacts of different sputtering atmospheres and annealing conditions are studied.The results show that annealing in N 2 ambience at higher temperature can reduce the leakage current significantly,and annealing in O 2 ambience can effectively decrease the oxygen vacancy in Al 2O 3 films.The study of the leakage current conduction mechanisms of Al 2O 3 gate dielectric films shows that the leakage is induced mainly by Schottky emission mechanism for substrate electron injection,while both Schottky emission and Frenkel-Poole emission mechanism may contribute to the leakage current for gate electron injection.

关 键 词：A12O3栅介质 泄漏电流输运机制 Schottky发射 Frenkel-Poole发射 

分 类 号：TN405[电子电信—微电子学与固体电子学]