基体温度对金刚石厚膜沉积质量的影响  

Effect of substrate temperature on depositing quality of diamond thick film

作　　者：黄树涛[1] 刘兴文[1] 许立福[2] 于骏一[2] 

机构地区：[1]沈阳工业学院机械工程分院,沈阳110168 [2]吉林大学机械科学与工程学院,长春130025

出　　处：《材料科学与工艺》2003年第3期324-326,共3页Materials Science and Technology

基　　金：沈阳市科学基金资助项目(200050029-00).

摘　　要：为探讨燃焰法沉积高质量金刚石厚膜的可能及其沉积速率,在反应气体流量比O2/C2H2=0 97～1范围内,研究了基体温度对燃焰法沉积金刚石厚膜的影响.结果表明,基体温度在610～730℃范围内可沉积出均匀、致密、结晶形态优良的金刚石厚膜;金刚石厚膜沉积速率随基体温度的下降而下降,基体温度约为730℃时,可以约50μm/h的较高速率沉积出淡黄色透明状高质量金刚石厚膜.当基体温度在820℃左右的高温时,金刚石厚膜不均匀,晶粒间存在较大间隙,且在金刚石厚膜生长过程中,存在较多的二次成核.In order to discuss the possibility and the growth rate of combustion flame method on deposit diamond thick film, the effect of substrate temperature on the depositing quality has been studied at the reaction gas flux of O2/C2H2=097～1. The SEM research results prove that the high quality diamond thick film can be obtained when the substrate temperature is 610～730 ℃. The film growth rate decreases as the temperature decreases and high quality film can be deposited at a high-rate of about 50 μm/h when the temperature is about 730 ℃. A high temperature of about 820 ℃ could result in inferior quality of diamond thick film, and many secondary nucleations exist during film growth.

关 键 词：基体 温度 金刚石厚膜 沉积 质量 燃焰法 晶粒 CVD 

分 类 号：TN304.055[电子电信—物理电子学]