玻璃与硅片场致扩散连接过程中的电流特性与断口分析  

Current Characteristics and Frature Analysis in Field-assisted Bonding of K_4 Glass-Silicon

作　　者：喻萍[1] 孟庆森[1] 薛锦[1] 

机构地区：[1]西安交通大学,陕西西安710049

出　　处：《洛阳工学院学报》2002年第4期31-33,共3页Journal of Luoyang Institute of Technology

基　　金：国家 2 11工程资助资助项目 (2 11-2 0 3 0 40 0 6)

摘　　要：对K4 玻璃与硅片在大气中进行了场致扩散焊 (阳极焊 )焊接试验。结果表明 ,K4 玻璃与硅片在焊接温度为 30 0～ 4 5 0℃和焊接电压为 70 0～ 85 0V的范围内都能够实现较好的连接。试验还表明 ,阳极焊过程中的电流随时间的延长而降低并渐趋稳定、随焊接温度和焊接电压的降低而减小。利用扫描电镜和能谱分析等手段对拉伸断口及接头组织和成分进行了分析。The experiment on the field assisted bonding anodic bonding between silicon and K 4 glass in air was made. The result shows that good bonding can be achieved with temperatures 300～450℃ and voltages 700～850V. The experiment also indicates that the current during anodic bonding reduces along with decreasing welding temperatures and voltages,and gradually gets stabilization in pace with times going. The tensile fracture and the microstructure and its component of joint are studied with the methods of SEM and EDX.

关 键 词：阳极焊 场致扩散连接 电流 玻璃 硅 断口 金相 焊接接头 形成机理 

分 类 号：TG456.9[金属学及工艺—焊接]