自由电子激光辐照半导体多量子阱的研究  

Free Electron Laser Irradiation Effects of GaAs/AlGaAs Quantum Wells

作　　者：邹睿[1] 林理彬[1] 张猛[1] 张国庆[2] 李永贵[2] 

机构地区：[1]四川大学物理系,四川成都610064 [2]中国科学院高能物理所,北京100080

出　　处：《中国激光》2003年第9期852-854,共3页Chinese Journal of Lasers

基　　金：国家自然科学基金 (编号 :6 0 0 880 2 );全国高校博士点基金资助项目

摘　　要：利用低温光荧光谱研究了自由电子激光辐照对GaAs/AlGaAs多量子阱光学性质的影响。用波长为 8 92μm ,光功率密度相应于电场强度为 2 0kV/cm的自由电子激光辐照多量子阱 6 0min ,发现量子阱特征峰 797nm经过辐照后峰值发生红移至 812nm ,波形展宽 ,峰高降低。对此结果进行了讨论 ,并与电子辐照的情况做了比较。Photoluminescence (PL) was observed from GaAs/AlGaAs quantum wells structure excited by mid-infrared free electron laser (FED irradiation. The experimental results showed that the characteristic PL peak of quantum wells was shifted to longer wavelength (red shift) and the intensity was decreased after FEL irradiation. The results are discussed and compared with that of electron irradiation.

关 键 词：激光技术 量子阱 自由电子激光辐照 低温光荧光谱 红移 

分 类 号：TN248.6[电子电信—物理电子学] O472.3[理学—半导体物理]