有机发光器件中载流子复合特性的数值模拟  

Numerical simulation of carrier recombination characteristics in light-emitting devices

作　　者：赵俊卿[1] 解士杰[2] 韩圣浩[2] 陈雷[2] 夏广瑞[2] 

机构地区：[1]山东建筑工程学院学报编辑部,山东济南250014 [2]山东大学物理与微电子学院,山东济南250100

出　　处：《山东建筑工程学院学报》2003年第3期10-14,共5页Journal of Shandong Institute of Architecture and Engineering

基　　金：国家自然科学基金项目(60176021)

摘　　要：考虑单层有机发光器件中注入载流子在电场作用下的漂移运动和Langevin复合,将注入特性量化为电极与有机层接触处的电流密度比,计算了有机层中的电场强度、载流子浓度和复合率分布,研究了注入特性、载流子迁移率及有机层厚度对载流子复合性能的影响。结果表明:正负载流子的迁移率比、注入平衡程度及有机层厚度是影响器件内电场、载流子浓度和复合率分布的重要因素。计算结果对于发光材料选择和有机发光器件结构的优化设计具有重要的指导意义。A numerical method was used to solve the bipolar injection problems for single-layer organic light-emitting devices. The drifting motion of carriers under electric field and Langevin recombination in the emitting layer were considered, and the interface properties were quantified as ratio of injection to total current intensities. The carrier concentration, electric filed and recombination rate distributions were calculated and analyzed . It was indicated that the mobility ratio of electrons to holes, injecting balance factor and thickness of the organic layer were crucial factors influencing these parameter distributions.

关 键 词：有机发光器件 载流子 数值模拟 双极注入 迁移率 复合率 

分 类 号：O472[理学—半导体物理]