用相干刻蚀制作大面积的二维纳米阵列(英文)  

Using Interferometric Lithography to Make Large-area Two-dimensional Nanoarrays

作　　者：向望华[1] 谭艺枝[1] 张贵忠[1] 王刚[1] J.B.Ketterson 

机构地区：[1]天津大学精密仪器和光电子工程学院,天津300072 [2]美国西北大学物理与天文学系,埃沃斯顿il60208

出　　处：《光电子．激光》2003年第10期1054-1057,共4页Journal of Optoelectronics·Laser

基　　金：WorksupportedbyNaturalScienceFoundationofChina(699870 0 2 ) ,699780 1 5

摘　　要：采用多级激光扩束获得大面积的均匀光场分布,利用相干刻蚀(IL)技术,制作了大面积(3.23cm2)的二维(2D)周期阵列结构,如光栅和栅格,并以此阵列制备出空间周期为300nm的金属Ag、Au和磁性材料Ni的点阵结构。The uniform light field over a large area, gained by cascaded laser beam expanding, was used to make a large area of 3.23 cm2 two-dimensional periodic array structures such as grating and grids by interferometric lithography technique. Arrays were engineered with a spatial period of 300 nm for metallic Ag and Au as well as magnetic material of Ni.

关 键 词：相干刻蚀 二维纳米阵列 多级激光扩束 光栅 栅格 

分 类 号：TN305[电子电信—物理电子学]