Zn_(0.85)Co_(0.15)O薄膜的制备及其结构分析  

Growth and Microstructures of Zn_0.85Co_0.15 O Films

作　　者：李爱侠[1] 苏凤莲[1] 周圣明[1] 刘艳美[1] 赵宗彦[1] 

机构地区：[1]安徽大学物理系,安徽合肥230039

出　　处：《真空科学与技术》2003年第5期353-355,共3页Vacuum Science and Technology

基　　金：安徽省自然科学基金(No.00047208)

摘　　要：用电子束蒸镀方法在(100)单晶Si衬底上,生长Zn0.85Co0.15O薄膜,并研究了衬底温度对薄膜质量的影响,结果表明当衬底温度为400℃时,外延膜取向性最好,且其(002)衍射峰半高宽最窄(为0.4834°)。Zn0.85Co0.15O Films were grown on Si(100) substrates by reactive electron beam evaporation. Its microstructures were characterized with X-ray diffraction (XRD) .We found that substrate temperature strongly affects the film quality and al a substrate temperature of 400℃highly c-axis oriented grains dominate in the film, with the narrowest(002) X-ray diffraction peak width of (0.4834°).

关 键 词：电子束反应蒸镀 Zn0.85Co0.50薄膜 衬底温度 微结构 

分 类 号：TB43[一般工业技术]