微桥结构铜膜杨氏模量和残余应力研究  

Investigation of Young's Modulus and Residual Stress of Copper Film Microbridges by MEMS Technology

作　　者：周勇[1] 杨春生[1] 陈吉安[1] 丁桂甫[1] 王莉[1] 王明军[1] 张亚民[1] 张泰华[2] 

机构地区：[1]上海交通大学微纳米科学技术研究院薄膜与微细技术教育部重点实验室微米/纳米加工技术国家级重点实验室,上海200030 [2]中国科学院力学研究所非线性力学国家重点实验室微米/纳米加工技术国家级重点实验室,北京100080

出　　处：《现代科学仪器》2003年第4期45-48,共4页Modern Scientific Instruments

基　　金：国家重点基础研究发展规划 (973)项目-"集成微光机电系统研究"子项目 (G1 9990 331 0 3)资助

摘　　要：采用MEMS(MicroelectromechanicalSystems)技术研制了铜 (Cu)膜微桥结构试样 ,应用陶瓷压条为承力单元 ,并与纳米压痕仪XP系统的Berkovich三棱锥压头相结合 ,解决了较宽Cu膜微桥加载问题。测量了微桥载荷与位移的关系 ,并结合微桥力学理论模型得到了Cu膜微桥的杨氏模量及残余应力 ,其值分别为 115 .2GPa和 19.3MPa ,与应用纳米压痕仪直接测得的带有Si基底的Cu膜杨氏模量 110± 1.6 7GPa相吻合。The microbridge testing method is used to measure the Young's modulus and residual stress of metallic films. Samples of copper film microbridge are managed to be fabricated by the MEMS(Microelectromechanical Systems) technology. Special ceramic shaft structure is designed to solve the problem of getting the load-deflection curve of Cu film microbridge by Nanoindenter XP system with normal Berkovich probe. Theoretical analysis of the microbridge load-deflection curve is proposed to evaluate the Young's modulus and residual stress of the films simultaneously. The calculated results based on experimental measurements show that the average Young's modulus and residual stress for the electroplated copper films are: 115.2 GPa and 19.3 MPa, respectively, while the Young's modulus measured by nano-hardness method on the same copper film based on silicon substrate is 110±1.67 GPa.

关 键 词：Cu膜微桥 MEMS技术 力学性能 

分 类 号：TB43[一般工业技术]