基于对极鳍线结构的Q波段固态功率放大器设计  

Design of Solid-state Power Amplifierby Using Antipodal Finline-to-microstripTransition in Q-band

作　　者：葛伟[1] 盛胜君[1] GE Wei;SHENG Sheng-jun(No.36 Research Institute of CETC,Jiaxing Zhejiang 314033,China)

机构地区：[1]中国电子科技集团公司第三十六研究所,浙江嘉兴314033

出　　处：《通信对抗》2017年第3期57-59,共3页Communication Countermeasures

摘　　要：介绍了一款频段为43~46GHz,采用对极鳍线微带过渡结构的功率放大器设计方法。对对极鳍线微带过渡结构进行模拟仿真并测试背靠背结构的插入损耗,其插入损耗在43~46GHz频段内小于2dB。电路设计中采用金丝键合工艺连接裸片与微带电路,并用HFSS对其进行仿真。选用2W裸片进行装配,测试结果表明在43~46GHz频段内,饱和功率输出1.3W以上,增益大于13dB,效率在8%以上。可以此模块为基本单元电路,利用功率合成技术完成Q波段高功率放大器单机的设计。An design of a solid-state power amplifier in 43 GHz^46 GHz by using antipodal finline-to-microstrip transition was presented.A low back-to-back insertion loss of less than 2 dB at the range of 43 GHz^46 GHz frequency was obtained from the transition structure. The design used gold boding wire connecting the die to themicrostrip and the structure was simulated by HFSS.A 2 Watt level die was selected for the amplifier module.The test result shows that Psat of 1.3 watt and gain of 13 dB in the frequency range of 43 GHz^46 GHz.It can be used as amplifier cell to consists high power amplifier in Q-band.

关 键 词：功率放大器 金丝键合 对极鳍线 

分 类 号：TN722.75[电子电信—电路与系统]