高气压反射式高能电子衍射仪监控脉冲激光外延氧化物薄膜  

In-situ monitoring of the growth of oxide thin films in PLD using high-pressure reflection high energy electron diffraction

作　　者：陈莺飞[1] 彭炜[1] 李洁[1] 陈珂[1] 朱小红[1] 王萍[1] 曾光 郑东宁[1] 李林[1] 

机构地区：[1]中国科学院物理研究所,超导国家重点实验室,北京100080 [2]北京辉光技术研究所,北京100080

出　　处：《物理学报》2003年第10期2601-2606,共6页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :10 174 0 93和 59832 0 50 );国家科技部重大基础研究规划项目 (批准号:G19990 6 46 0 4 )资助的课题~~

摘　　要：在超高真空分子束外延 (MBE)生长技术中 ,反射式高能电子衍射仪 (RHEED)能实时显示半导体和金属外延生长过程 ,给出薄膜表面结构和平整度的信息 ,成为MBE必备的原位表面分析仪 .为了研究氧化物薄膜如高温超导(YBa2 Cu3 O7)、铁电薄膜 (Sr1 -xBaxTiO3 )及它们的同质和异质外延结构的生长机理 ,获得高质量的符合各种应用需要的氧化物多层薄膜结构 ,在常规的制备氧化物薄膜的脉冲激光沉积 (PLD)设备上配备适合在高气压制膜条件下使用的高气压反射式高能电子衍射仪 (high pressureRHEED) ,在国内首先实现氧化物薄膜生长过程的实时监控 .详细介绍了高气压反射式高能电子衍射仪的结构和特性 ,给出了碳酸锶 (SrTiO3 )基片上同质外延碳酸锶铌 (SrTiO3 +2 %Nb)和异质外延钇钡铜氧 (Y1 Ba2 Cu3 O7)薄膜生长过程中衍射图形和零级衍射强度震荡 .Reflection high\|energy electron diffraction (RHEED) is very surface sensitive a nd often used for the analysis and monitoring of thin film growth in ultrahigh v a cuum deposition system (for instance, Molecular Beam Epitasis). In order to in\| situ monitor the growth of oxide thin films at high oxygen pressure up to 50Pa, a high\|pressure RHEED designed and fabricated by our group was used for first time in our pulsed laser deposition system (PLD). Using the PLD system the Nb-doped SrTiO 3 (STNO) and Y 1Ba 2Cu 3O 7 (YBCO) thin films have been epitaxially grown on SrTiO 3 (001) substrates. The RHEED patterns of the STNO and YBCO films and the oscillation of the intensity of the pattern have been measured by the high-pressure RHEED during deposition. In addition,the surface morpholoyg of the films and the dynamic analysis of film growth process were discussed.

关 键 词：高温超导薄膜 RHEED 超高真空分子束外延生长技术 反射式高能电子衍射仪 监控 脉冲激光 氧化物薄膜 

分 类 号：O484.1[理学—固体物理] TM26[理学—物理]