总剂量辐射对高速电路时间特性的影响  

Effects of total dose radiation on time characteristic of high-speed CMOS circuits

作　　者：艾尔肯[1] 余学峰[1] 郭旗[1] 严荣良[1] 陆妩[1] 张国强[1] 任迪远[1] 

机构地区：[1]中国科学院新疆物理研究所,乌鲁木齐830011

出　　处：《核技术》2003年第11期834-836,共3页Nuclear Techniques

摘　　要：对不同辐照偏置条件下,总剂量辐射对高速CMOS电路54HC04时间参数的影响进行了探讨,并与相应的直流参数的响应特性进行了对比,研究了两者之间的相关性。结果表明,在总剂量辐射环境下,高速CMOS电路的延迟时间变化与阈电压的漂移有着强烈的相关性,0 V和4.5 V两种偏置状态将分别导致电路的时间参数的明显退化。The effects of total dose radiation on the time characteristic of high-speed CMOS circuits in different radiation bias have been studied and compared with the related DC parameters . The results indicate that there are intense interrelations between the time characteristic and the DC parameters. It is also shown that the different radiation bias causes obviously different irradiation degeneration in the time characteristic of high-speed CMOS circuits.

关 键 词：时间特性 总剂量辐射 辐照偏置 

分 类 号：TN432[电子电信—微电子学与固体电子学]