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机构地区:[1]北京市第四医院神经科,北京100062 [2]北京市天坛医院神经外科 [3]北京市神经外科研究所
出 处:《中华解剖与临床杂志》2000年第4期198-200,共3页Chinese Journal of Anatomy and Clinics
摘 要:目的:探讨迷走神经刺激术(VNS)抗癫痫作用的机制是否为VNS引起孤束核部位GABA含量变化。方法:通过Waters高效液相色谱系统分析32只接受不同持续时间迷走神经刺激的大鼠脑干孤束核部位主要兴奋及抑制性氨基酸含量的变化。结果:1小时持续刺激组孤束核部位GABA含量较对照组升高且差异有显著意义。结论:迷走神经刺激术可能通过升高孤束核部位的GABA含量起到抗癫痫作用。Objective: To demonstrate the hyposis that the possible mechanism of the anticonvulsant effect of vagus nerve stimulation (VNS) is the increase of GABA release at the nucleus of solitary tract (NTS). Methods: Thirty -Two wistar rats were divided into 4 groups. The left vagus nerve of all the rats were exposed and attached to the electrodes. After 0,0. 5,60minutes continuous stimulation, and 60 minutes intermittent stimulation (2ms pulse width, 100HZ, 10V) ,amino acid level in the tissue from brainstem (tractus solitarius) was analysed. Results: In one hour continuous stimulation group GABA level increased ( P < 0.05) and there was no alteration of other amino acid level. Conclusion: Our results suport the hyposis that the possible mechanism of the antiepileptic action of the VNS is the increase of GABA released at NTS.
关 键 词:迷走神经刺激术 脑干 孤束核 GABA含量 VNS 动物实验
分 类 号:R742.1[医药卫生—神经病学与精神病学]
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