一种硅/二氧化硅双层微悬臂梁温度传感器  

A Si/SiO_2 Bi-layer Microcantilever Temperature Sensor

作　　者：韩建强[1] 朱长纯[1] 刘君华[1] 魏培永[1] 

机构地区：[1]西安交通大学电信学院,西安710049

出　　处：《仪器仪表学报》2003年第5期473-476,共4页Chinese Journal of Scientific Instrument

基　　金：国家自然科学基金资助项目 (6 0 0 36 0 10 ;5 0 0 770 16 ;6 0 2 76 0 37) ;教育部博士点基金 (2 0 0 2 0 6 980 14 )资助项目

摘　　要：利用 IC工艺和微机械加工技术制作了一种硅 /二氧化硅双层微悬臂梁温度传感器。基于硅和二氧化硅两种材料热膨胀系数的差异 ,不同温度下梁的挠度不同 ,其形变可通过位于梁根部的压敏电桥检测。理论计算和实验结果表明 :压敏电桥输出电压与温度成线性关系。对器件结构进行了优化设计 ,实验探索了提高传感器测量重复性的时效处理工艺。该温度传感器可用于瞬态温度的测量。A novel Si/SiO 2 bi-layer microcantilever temperature sensor is designed and fabricated by microelectronic and micromechincal technologies. The deflection of the beam varies with the temperature base on the difference coefficient of thermal expansion between silicon and silica.The transfiguration is measured by the wheatstone bridge at the clamped end of the beam.Theoretic computation and experimental results show that the output voltage is linear with temperature. The geometry of cantilevers is optimized to maximize the sensitivity.Ageing process is applied to improve the repeatability of the sensor.This sensor can be used to measure transient temperature.

关 键 词：硅/二氧化硅双层微悬臂梁 温度传感器 时效处理 瞬态温度 微机械加工 

分 类 号：TP212.11[自动化与计算机技术—检测技术与自动化装置]