硼掺杂对a-Si薄膜电导率及太阳电池效率的影响  

Influence of Boron Doping on Conductivity of Amorphous Silicon Films and Photovoltaic Efficiency of Solar Cells

作　　者：林列[1] 蔡宏琨[2] 张德贤[1] 孙云[1] 郝延明[2] 

机构地区：[1]南开大学信息技术科学学院,天津300071 [2]天津师范大学物理系,天津300074

出　　处：《光电子．激光》2003年第11期1146-1148,共3页Journal of Optoelectronics·Laser

基　　金：国家"863"计划资助项目(2002AA715081);国家"973"计划资助项目(ZM200202A01)

摘　　要：对等离子增强化学气相沉积技术(PECVD)低温制备的非晶硅(a Si)薄膜的电导率随B掺杂浓度的变化规律进行了研究。结果表明:当B2H6/SiH4由0.6%增加到0.8%时,a Si薄膜的暗电导率由10-5(Ω·cm)-1急剧增加到10-1(Ω·cm)-1;进一步增加B2H6/SiH4时,暗电导率增加缓慢;当B2H6/SiH4大于1.0%时,暗电导率急剧下降。对B2H6/SiH4为1.0%及1.2%的P层材料制备的太阳电池的研究结果表明:采用B2H6/SiH4为1.2%的光电转换效率优于1.0%。The conductivity of amorphous silicon (a-Si) film prepared by the plasma enhanced chemical vapor deposition (PECVD) has been investigated at low temperature. The experimental results show that with increasing B2H6/SiH4 from 0.6% to 0.8%, the conductivity of the a-Si films has a great increase from 10-5 to 10-1 (Ω&middotcm)-1. However, with the further increasing B2H6/SiH4 from 1.0%, the one has a fast decrease. Two solar cells have been made from a-Si film as p-layer whose B2H6/SiH4 are 1.0% and 1.2%, respectively. The result shows that the photovoltaic efficiency of the latter, is prior to the other.

关 键 词：硼掺杂 非晶硅薄膜 电导率 太阳电池 光电转换效率 

分 类 号：O484.42[理学—固体物理]