Si微电阻桥温度分布与热传导特性的显微Raman光谱研究  

Heat conduction investigations of the Si bridge in infrared emitter using micro-Raman scattering

作　　者：蔡炜颖[1] 李志锋[1] 陆卫[1] 李守荣[1] 梁平治[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《物理学报》2003年第11期2923-2928,共6页Acta Physica Sinica

基　　金：国家自然科学基金 (批准号 :60 2 44 0 0 2和 10 2 3 40 40 )资助的课题~~

摘　　要：采用显微Raman光谱方法对红外目标模拟器中重掺杂Si微电阻桥单元的热传导特性进行研究 ,根据Si桥的实际特性建立相应的Raman散射模型 ,通过测量Raman峰位的移动得到高功率激光辐照下测量点的温度 .对Si桥桥面分别进行了沿某些特殊线段的逐点线扫描和覆盖全部桥面的面扫描 ,得到各点的温升及其分布 .用基于有限元分析的软件结合Si桥结构参数对各测量点的温升进行了模拟计算 ,其结果在热导分布的基本趋势上与实验相一致 .实验细致地揭示了热导分布的局域起伏 ,反映出实际器件的不均匀性 ,为改进器件设计、优化器件性能提供了实验依据 .Micro-Raman scattaring has been used to study the characteristics of heat conduction on heavy boron-doped Si bridge in an infrared emitter. Based on the proper spectral modeling and the temperature dependence of the position of the Raman peak, the bridge temperature rise due to the heating of high power laser is obtained. Using this method and in the way of point by point, the direct imaging of heat conduction as a distribution map of temperature rise has been also obtained. Compared with the simulated temperature distribution obtained by the finite element software, the experimental and theoretical results are in agreement with each other. While experiments have revealed the local fluctuations of heat conduction in detail, reflecting the nonuniformity of the actual device, and providing experimental bases for the micro-device optimization of the structure design and its fabrication.

关 键 词：拉曼光谱 硅微电阻桥 温度分布 热传导 红外目标仿真器 拉曼散射 热导分布 器件设计 

分 类 号：O433[机械工程—光学工程]