利用STM构建金属有机材料的纳米结构和改变电学性质  

Nanostructure Fabrication and Electrical Modification on Metalorganic Materials Using STM

作　　者：严学俭[1] 吉小松[1] 李旭[1] 邱伟民[1] 张群[1] 王伟军[1] 华中一[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空电子技术》2003年第5期49-51,53,共4页Vacuum Electronics

摘　　要：　研究和开发利用扫描隧道显微镜(STM)对材料进行纳米尺度加工的功能,藉助于STM针尖和样品之间的强电场在金属有机络合物Ag TCNQ薄膜表面构建了纳米点、纳米点阵和纳米线等纳米结构。伏安(I U)特性曲线和扫描隧道的测试表明,在针尖强场作用后材料表面的局域电子态密度迅速增大,在电学上由高阻态转变为低阻态,这种效应可能归因于金属原子和有机分子之间的电荷转移。这些纳米结构展示了用作高密度存储器和纳米导线的可能性,有机导电材料将是未来纳米电子材料的理想候选者,而STM则将成为纳米电子学微细加工的有力工具。We have studied and developed processing functions of materials in nanoscale using the scanning tunneling microscope (STM). Under the strong electrical field nanodot, nanodot array and nanoline were fabricated on surfaces of the metalorganic AgTCNQ films. Tests of the IU characteristic and the scanning tunneling spectrum (STS) showed that the local density of electronic states (LDOS) on the material surface increased rapidly after the interaction of the STM tip's strong field and it led to an electrical transformation from a high resistance state to a low resistance state. This effect could be attributed to the charge transfer between the metal atoms and the organic molecules. These nanostructures demonstrated possibilities of being used as high density memory and nanoscale conducting wire. The organic conducting materials will be an ideal candidate of the materials the nanoelectronics in and the STM will be the useful tool for microfabrication in future.

关 键 词：构建纳米结构 电学改性 金属有机材料 扫描隧道显微镜 

分 类 号：TN45[电子电信—微电子学与固体电子学]