Ag掺杂对新型SnO_2压敏材料的电学性质的影响  

Effect of Ag dopant on the electrical properties of novel SnO_2 varistors

作　　者：王矜奉[1] 陈洪存[1] 王文新[1] 苏文斌[1] 臧国忠[1] 亓鹏[1] 王春明[1] 赵春华[2] 高建鲁 

机构地区：[1]山东大学物理与微电子学院晶体材料国家重点实验室,山东济南250100 [2]滨州师范专科学校物理系,山东滨州256604 [3]济南安太电子研究所,山东济南250010

出　　处：《功能材料》2003年第6期685-686,689,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(50072013)

摘　　要：　烧渗银电极对压敏电阻的性能是有很大影响的。为了弄清Ag对(Co、Nb)掺杂的新型SnO2压敏材料电学性质的影响,做了组分为SnO2+1.50%CoCl2·6H2O+0.10%Nb2O5+x%Ag2O(x=0.00、0.02、0.50和1.00)的系统实验。当AgO的含量从0.00增加到1mol%时,(Co,Nb)掺杂SnO2压敏电阻的击穿电压从349V/mm增大到429V/mm,1kHz时的相对介电常数从2240减小到1560。晶界势垒高度测量揭示,SnO2的晶粒尺寸的迅速减小是击穿电压急剧增高和介电常数迅速减小的主要原因。对Ag掺杂量增加引起SnO2晶粒减小的根源进行了解释。The varistor electrodes applied by firing processing have a great influence on the properties of the varistors. In order to clarify the effects of Ag on the novel SnO_2 varistors, the experiment for compositions of SnO_2+1.50%CoCl_2·H_2O+0.10%Nb_2O_5+_x_% Ag_2O (_x_=0.00, 0.02, 0.50, 1.00) was conducted. It was found that the breakdown voltage of the SnO_2 based varistors increased from 349V/mm to 429V/mm, and the relative dielectric constant at 40Hz of the SnO_2 based varistors decreased from 2240 to 1560 with increasing Ag_2O concentration from 0 to 1.00mol%. Measurement of the barrier height at grain boundaries reveal that the decrease of the SnO_2 grain size with increasing Ag_2O concentration from 0 to 1.00mol% was the reason for raising the breakdown voltage and lowering the dielectric constant. The origin for the deduction of SnO_2 grain size with increasing Ag_2O concentration was explained.

关 键 词：氧化银 二氧化锡 势垒 电学非线性 掺杂 压敏电阻 

分 类 号：TN379[电子电信—物理电子学]