量子阱太赫兹探测材料设计与生长的研究  

Study of Design and Growth on Quantum Well Structure Terahertz Material

作　　者：宋淑芳[1] 邢伟荣[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《微波学报》2015年第6期88-90,共3页Journal of Microwaves

基　　金：电科集团创新基金项目

摘　　要：子带跃迁的量子阱结构太赫兹探测器具有响应速度快等特点,有广泛的应用前景,越来越受到研究人员的关注。以量子力学基本原理,量子阱结构材料光吸收的特性,以及光导型探测器暗电流分析为基础,进行了量子阱厚度、势垒层Al含量和量子阱掺杂浓度等参数的Al Ga As/Ga As量子阱太赫兹探测材料结构设计,按照优化后的外延参数进行了材料生长,获得了符合设计要求的探测材料。Terahertz photon detectors have been demonstrated using intersubband transitions in semiconductor quantum structures. Thecharacteristic of very fast time response of these semiconductor detectors make them attractive for many application. In this paper,many parameters of Al Ga As / Ga As quantum well structure terahertz material,such as quantum well thickness,Al contents of Al Ga As barrier layer,dopant concentration of Ga As quantum well,absorption of quantum well material and dark current of photoconductive detector were designed on the basis of quantum mechanics. According to optimized parameters,quantum well materialwas grown successfully,and the satisfied material was obtained.

关 键 词：量子阱结构 太赫兹探测材料 光导探测器 

分 类 号：TN215[电子电信—物理电子学]