近红外Si_(0.8)Ge_(0.2)/Si横向pin探测器的模拟与测试  

Simulation and Measurem ent of Near-infrared Si_(0.8)Ge_(0.2)/Si Lateral pin Photodetector

作　　者：莫太山[1] 张世林[1] 郭维廉[1] 郭辉[1] 郑云光[1] 

机构地区：[1]天津大学电子信息工程学院微电子系,天津300072

出　　处：《固体电子学研究与进展》2003年第3期311-315,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目 (批准号 :6983 60 2 0 )

摘　　要：设计了一种新型叉指状近红外 Si0 .8Ge0 .2 / Si pin横向光电探测器。采用半导体器件模拟软件 Atlas分别对该器件平衡条件下物理特性及反向偏压下电场分布、光电特性进行了模拟 ;对实际制作的光电探测器进行了测试 ,结果表明 :其波长响应范围为 0 .4～ 1 .3μm,峰值响应波长在 0 .93μm,响应度达 0 .3 8A/ W,寄生电容小于 2 .0 p F。实验结果和模拟结果符合得很好。其良好的光电性能为应用于近红外光的高速。A novel interdig i tated near infrared Si 0.8 Ge 0.2 /Si pin lateral photodetector is designed. B y using the device simulator ATLAS, its physical characteristics in equilibrium state and the electric field distributio n as well as photoelectric characteristi cs at the reverse voltage of 3 V are sim ulated respectively. We have also comple ted the tests on the fabricated photodet ector. Results indicate that the photore sponse ranges from 0.4～1.3 μm, the peak wavelength reaches 930 nm, and it attain s a responsivity of 0.38 A/W and exhibit s small parasitic capacitance of less th an 2.0 pF. The experimental data agrees well with the simulated results. Its dis tinct characteristics make it possible t o be used in Si based optoelectronic int egration with high speed and low operati ng voltage.

关 键 词：光电集成电路 Si0.8Ge0.2/Si-pin 横向光电探测器 模拟 光电性能 近红外光 

分 类 号：TN215[电子电信—物理电子学] TN491