光伏新材料——掺氮碳薄膜溅射制备技术及测试  

Synthesis Technique and XPS Test of Carbon Thin Films Doped with Nitrogen Ions

作　　者：丁正明[1] 周之斌[2] 崔容强[2] 孙铁囤[2] 贺振宏[2] 

机构地区：[1]上海交通大学分析测试中心,上海200030 [2]上海交通大学物理系太阳能研究所,上海200030

出　　处：《固体电子学研究与进展》2003年第3期320-322,共3页Research & Progress of SSE

摘　　要：介绍了采用氮气离子束溅射 ,高纯石墨为靶材 ,沉积掺氮碳薄膜的设备及工艺技术。对薄膜的沉积过程作了讨论 ,采用 X射线光电子能谱 (XPS)技术等对薄膜结构成分、氮 -碳、碳 -碳原子之间的键以及结合能作了研究 ,在 (1 1 1 )单晶硅片上沉积掺氮碳薄膜 ,构成 C/Si异质结 ,在 1 0 0 m W/cm2 光照下 ,开路电压达 2 0 0 m V。In this paper, a kind of depositing porcess, ion beam spu ttering, was introduced, which was used to form a new photovoltaic material: N d oped carbon thin films. Nitrogen was use d as sputtering gas, and a high pure gra phite sheet was served as a sputtering t arget. XPS and AFM techniques were empol yed as test probes for determining their structure and chemical bonding properti es. Si/C hetero junction has been fabric ated successfully. Its open circuit volt age reaches 200 mV, under 100 mW/cm 2 AM 1.5 illumination.

关 键 词：光伏材料 掺氮碳薄膜 溅射制备技术 测试 碳/硅异质结 X射线光电子能谱 太阳能电池 

分 类 号：TM914.4[电气工程—电力电子与电力传动]