硅基多孔氧化铝模板非水电沉积CdS纳米线的研究  

Study of CdS Nanowires Deposited in Silicon Based Porous Alumina Film by Non -aqueous Electrochemical Deposition

作　　者：杨阳[1] 陈健斌[1] 陈慧兰[1] 鲍希茂[2] 

机构地区：[1]南京大学化学系,配位化学国家重点实验室,南京210093 [2]南京大学物理系,固体微结构物理国家重点实验室,南京210093

出　　处：《无机化学学报》2004年第1期65-68,共4页Chinese Journal of Inorganic Chemistry

基　　金：国家自然 科学基金(No.20071017;50272029);博士学科点专项基金(No.20 00028401)资助项目

摘　　要：Si-based porous alumina is prepared by anodization of aluminum film grown on the silicon substrate and this structure c ould act as a template for preparation of Si-based nano-materials.Using this template,Si-based CdS nanowires are fabricated by non-aqueous electrochemical deposition method.The prepared sample is characterized by X-ray diffraction( XRD).Its morphology is observed by both transmission electron microscope(TEM )and atomic force microscope(AFM).Meanwhile,CdS nanowires deposited in Si- based porous alumina film present good light-emitting properties,which is expe cted to be used as Si-based nanoscaled light source.Si-based porous alumina is prepared by anodization of aluminum film grown on the silicon substrate and this structure c ould act as a template for preparation of Si-based nano-materials.Using this template,Si-based CdS nanowires are fabricated by non-aqueous electrochemical deposition method.The prepared sample is characterized by X-ray diffraction( XRD).Its morphology is observed by both transmission electron microscope(TEM )and atomic force microscope(AFM).Meanwhile,CdS nanowires deposited in Si- based porous alumina film present good light-emitting properties,which is expe cted to be used as Si-based nanoscaled light source.

关 键 词：硅基 多孔氧化铝模板 非水电沉积 CDS 纳米线 光致发光 半导体材料 硫化镉 

分 类 号：TN304.25[电子电信—物理电子学]