多孔硅基体系发光特性研究进展  

Progress in Research on Luminescence Properties of Porous Sillicon-based Composite

作　　者：赵毅[1] 杨德仁[1] 周成瑶[1] 阙端麟[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《材料导报》2003年第9期39-41,31,共4页Materials Reports

基　　金：国家杰出青年基金(60225010)

摘　　要：综述了多孔硅基复合体系发光特性的研究进展,阐述了多孔硅基体系及其发光特性,详细介绍了影响多孔硅基体系发光特性的因素和制备多孔硅基体系的方法,并讨论了多孔硅基体系的发光机理。最后综述了目前有待于进一步深入研究的问题及发展趋势。This paper reviews briefly research on luminescence properties of porous silicon-based composite. Composition systems and their luminescence properties are discussed, followed by a review of the factors that affect luminescence properties of the composition and the synthetic methods of porous silicon-based composite. Furthermore , the mechanism of luminescence of porous silicon-based composite is discussed. Finally current problems and developing tendency are described.

关 键 词：多孔硅基复合体系 发光特性 半导体材料 二氧化钛 硫化镉 碳化硅 氧化锌 

分 类 号：TN304.24[电子电信—物理电子学]