半导体器件辐射电离效应的激光模拟方法  

Basic principles and research progress of laser simulation of ionization radiation effect in semiconductor devices

作　　者：李沫[1,2] 孙鹏[1,2] 宋宇[1,2] 代刚[1,2] 张健[1,2] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621999 [2]中国工程物理研究院微系统与太赫兹研究中心,四川绵阳621999

出　　处：《太赫兹科学与电子信息学报》2015年第1期160-168,共9页Journal of Terahertz Science and Electronic Information Technology

基　　金：中国工程物理研究院院长基金资助项目(2014-1-100)

摘　　要：因对半导体器件进行安全、快捷、无损伤的辐射效应研究及验证的迫切需求,激光模拟辐射电离效应方法应运而生,并得到了国外科研界的推动和认可。相比于大型地面辐射模拟装置,激光模拟方法具有许多独特优势,可为深入认识半导体器件辐射效应,开展有针对性的抗辐射加固设计提供重要的补充手段,其研究在理论和应用方面均具有重要意义。本文简要叙述了γ射线、激光与半导体器件相互作用产生电离效应的主要机理,归纳了激光模拟的物理基础和主要特点,总结了国内外发展的情况,深入分析了当前研究存在的问题,并提出了开展研究可以采取的手段和方法。最后展望了未来值得进一步探索的研究内容和方向。According to the requirements of safe, simple and nondestructive radiation effect investigation of semiconductor devices, the method of laser simulation was proposed and greatly promoted. Compared with large-scale facilities, laser simulation has various unique advantages. It helps understand the ionization radiation effect in depth and is an effective low-cost, table-top supplement for the hardness assurance. Its research shows great significance for radiation effect study in both theory and practice. In this paper, the basic principles of the interactions of γ and laser with semiconductor devices are firstly presented. Then the physical basics and characteristics of laser simulation are given, with the research progress review followed. The existing problems of current research are deeply discussed providing with feasible research approaches. In the end, necessary research contents in the future are proposed.

关 键 词：半导体器件 辐射电离效应 激光模拟 

分 类 号：TN303[电子电信—物理电子学]