Design,characterization and fabrication of an In_(0.53)Ga_(0.47)As planar Gunn diode operating at millimeter waves  

作　　者：Mohamed Ismaeel Maricar A Khalid D S R Cumming C H Oxley 

机构地区：[1]School of Engineering and Computing Science,University of Durham [2]Microsystem Technology Research Group,University of Glasgow [3]Department of Electronics Engineering,De Montfort University

出　　处：《太赫兹科学与电子信息学报》2015年第3期507-510,共4页Journal of Terahertz Science and Electronic Information Technology

基　　金：supported by ESPRC through EP/H011862/1,and EP/H012966/1

摘　　要：This paper describes the design,characterization and fabrication of a planar In0.53Ga0.47As based planar Gunn diode on an In P semi-insulating substrate.The planar Gunn diode was designed in Coplanar Waveguide(CPW)format with an active channel length and width of 4μm and 120μm respectively,and modeled using the Advanced Design System(ADS-2009)simulation package.The initial experimental measurements have given a fundamental oscillation frequency of 63.5 GHz with a RF output power of-6.6 d Bm,which is the highest recorded power for an In P based planar Gunn diode.This paper describes the design,characterization and fabrication of a planar In0.53Ga0.47As based planar Gunn diode on an In P semi-insulating substrate.The planar Gunn diode was designed in Coplanar Waveguide(CPW)format with an active channel length and width of 4μm and 120μm respectively,and modeled using the Advanced Design System(ADS-2009)simulation package.The initial experimental measurements have given a fundamental oscillation frequency of 63.5 GHz with a RF output power of-6.6 d Bm,which is the highest recorded power for an In P based planar Gunn diode.

关 键 词：INDIUM PHOSPHIDE PLANAR GUNN devices millimeter-wa 

分 类 号：TN31[电子电信—物理电子学]