基于SiGe BiCMOS工艺的片上太赫兹滤波器  

Terahertz filter based on SiGe BiCMOS process

作　　者：崔博华[1] 李一虎 熊永忠[1] 

机构地区：[1]中国工程物理研究院太赫兹半导体器件研究室,四川成都611731

出　　处：《太赫兹科学与电子信息学报》2015年第6期849-852,共4页Journal of Terahertz Science and Electronic Information Technology

摘　　要：基于硅锗双极-互补金属氧化物半导体(SiGe BiCMOS)工艺,采用衬底集成波导(SIW)结构,设计了几款片上太赫兹滤波器。测试结果中带宽和中心频率分别为20GHz@139GHz,20GHz@168GHz和26GHz@324GHz,结果表明制作的带通滤波器中心频率与设计的偏差很小;滤波器在中心频率的插入损耗为-6dB@139GHz,-5.5dB@168GHz和-5dB@324GHz。Based on Silicon Germanium Bipolar Complementary Metal Oxide Semiconductor(SiGe BiCMOS) process technology, several terahertz filters with Substrate Integrated Waveguide(SIW) structures are designed. The measured results show that the deviation of the center frequency is very small compared with the design. The center frequencies and bandwidths of the filters are 20GHz@139GHz, 20GHz@168GHz and 26GHz@324GHz, respectively. The insertion losses of the filters on the center frequency are -6dB@140GHz, -5.5dB@170GHz and -5dB@330GHz, respectively.

关 键 词：滤波器 太赫兹 硅锗双极-互补金属氧化物半导体 衬底集成波导 

分 类 号：TN713[电子电信—电路与系统]