Low-temperature synthesis of SiC nanowires with Ni catalyst  

作　　者：Wei-Li Xie Xiao-Dong Zhang Wen-Hui Liu Qi Xie Guang-Wu Wen Xiao-Xiao Huang Jian-Dong Zhu Fei-Xiang Ma 

机构地区：[1]School of Material Science and Engineering,Harbin Institute of Technology [2]Department of Prosthodontics,School of Stomatology,Harbin Medical University [3]School of Material Science and Engineering,Harbin Institute of Technology at Weihai

出　　处：《Rare Metals》2019年第3期206-209,共4页稀有金属（英文版）

基　　金：financially supported by the National High Technology Research and Development Program (No. 2007AA03Z340);the National Natural Science Foundation of China (Nos. 51202045,51021002, 51172050, 51102063, 51372052 and 50672018);the Fundamental Research Funds for the Central Universities(No. HIT. NSRIF. 2013004);the Key Technology Research and Development Program of Heilongjiang Province (No. GC12C305-3)

摘　　要：SiC nano wires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 ℃ by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron microscopy(SEM), transmission electron microscopy(TEM)and X-ray diffraction(XRD). The results show that the assynthesized nanowires are β-SiC single crystalline with diameter range of 50-100 nm, and length of tens of micron by directly annealing at 900 ℃. The SiC nano wires grow along the [111] direction with highly uniform morphology. And the possible growth mechanism of SiC nano wires is proposed.The present work provides an efficient strategy for the production of high-quality SiC nano wires.SiC nano wires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 ℃ by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron microscopy(SEM), transmission electron microscopy(TEM)and X-ray diffraction(XRD). The results show that the assynthesized nanowires are β-SiC single crystalline with diameter range of 50-100 nm, and length of tens of micron by directly annealing at 900 ℃. The SiC nano wires grow along the [111] direction with highly uniform morphology. And the possible growth mechanism of SiC nano wires is proposed.The present work provides an efficient strategy for the production of high-quality SiC nano wires.

关 键 词：SIC NANOWIRES Single CRYSTALLINE silicon Ni CATALYST GROWTH mechanism 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TQ163.4[化学工程—高温制品工业]