Room-temperature ferro- magnetic semiconductor MnxGa(1-x)Sb  

作　　者：CHENNuofu ZHANGFuqiang 等 

机构地区：[1]KeyLaboratoryofSemiconductorMaterialsScience,InstituteofSemiconductor,ChineseAcademyofSciences,Beijing100083,China [2]KeyLaboratoryofSemiconductorMaterialsScience,InstituteofSemiconductor,ChineseAcademyo

出　　处：《Chinese Science Bulletin》2003年第6期516-518,共3页

基　　金：supported by the National Natural Science Foundation of China(Grant No.60176001);Special Funds for the Major State Basic Research Projects(Grant Nos.G20000365 and G20000683)

摘　　要：Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by X- ray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capaci-tance-voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electro-chemical capacitance-voltage profiler reveals that the con-centration of p-type carriers in MnxGa1-xSb is as high as 1×1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by X- ray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capaci-tance-voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electro-chemical capacitance-voltage profiler reveals that the con-centration of p-type carriers in MnxGa1-xSb is as high as 1×1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.

关 键 词：铁磁半导体 室温 MnxGa1-xSb 锌掺杂 锰离子 磁滞回路 载流子密度 

分 类 号：TN304.7[电子电信—物理电子学]