缺陷交互作用对陶瓷半导体导电性能的影响  

Effect of Interaction Between Defects on Conduction in Ceramic Semiconductors

作　　者：黄安荣[1] 

机构地区：[1]中科院新疆物理所

出　　处：《传感技术学报》1991年第2期51-55,共5页Chinese Journal of Sensors and Actuators

摘　　要：本文借助于缺陷化学反应过程,分析了陶瓷半导体内缺陷间的交互作用,得到了陶瓷半导体实验研究的三个重要启示:(1)强还原(或氧化)和施主(或受主)掺杂对同一样品不能同时起到最佳效果;(2)本征原子空位对施主或受主的补偿导致电导率的非线性增长,(3)缺陷的缔合降低了半导化杂质的有效浓度,从而使电导性能发生异常变化。In the present paper, the interaction between defects in semiconducting ceramics was considered by means of quasi-chemical reaction of defects. Three important enlightenments are gained which are: (1) strong reduction (or oxidization) and donor (or acceptor) dopant were difficult to have, at the same time, optimal effect on the same sample; (2) Compensation of intrinsic atomic vacancy for donor or acceptor leads conductivity to increas unlinearly; (3) Association of defects could reduce effecient dopant concentration, thus bringing about anomal variation with electrical characteristics.

关 键 词：交互作用 陶瓷半导体 导电性能 本征块陷 电离度 

分 类 号：TM283[一般工业技术—材料科学与工程]