Si和Si尖上纳米金刚石场电子发射性质的研究  

Study on the Field Electron Emission of Nanocrystalline Diamond on Si and Si Tips

作　　者：廖克俊[1] 王万录[1] 吕建伟[1] 孙晓楠[1] 王蜀霞[1] 

机构地区：[1]重庆大学应用物理系教育部光电技术和系统重点实验室,重庆400044

出　　处：《光电子技术》2003年第4期218-220,共3页Optoelectronic Technology

基　　金：国家自然科学基金资助项目 ( No.50 0 50 2 7)

摘　　要：研究了 Si和 Si尖上纳米金刚石场电子发射性质。纳米金刚石是利用热灯丝 CVD法合成的 ,反应气体是 CH4、N2 和 H2 的混合物。实验结果表明 Si衬底上的纳米金刚石特别是 Si尖上的金刚石与多晶金刚石相比 ,前者极大地改善了场发射性质。场发射电场阈值和电流与金刚石晶粒度密切相关。文中对其结果进行了讨论。In this paper, the field emission properties of nanocystalline dia mond on Si and Si tips were investigated. Nanocrystalline diamond was synthesize d by hot-filament chemical vapour deposition. The reactive gases were the mixtu r es of CH 4, N 2 and H 2. The experimental results showed the field emissio n of nano crystalline diamond on Si, especially on Si tips was greatly improved as compar ed with polycrystalline diamond on Si. The threshold and current of field emission were closely relative to diamond grain size. The results obtained were discussed.

关 键 词：纳米金刚石 场电子发射 Si尖 场增强因子 

分 类 号：O472.8[理学—半导体物理]