高压高阻断增益的水平沟道场控晶闸管  

A Lateral Channel Field-Controlled Thyristor With High Voltage and High Forward Blocking Gain

作　　者：郑海东[1] 叶润涛[1] 林新明 

机构地区：[1]浙江大学信息与电子工程系,浙江杭州310008 [2]杭州八达微波技术器件厂,浙江杭州310012

出　　处：《微电子学》1992年第6期8-10,20,共4页Microelectronics

基　　金：国家自然科学基金

摘　　要：水平沟道场控晶闸管(简称LFCT)是由垂直沟道场控晶闸管发展而来的,它具有开关速度快、与集成电路工艺兼容等特点。我们采用刻蚀V型槽来代替栅扩散,已制成最大正向阻断电压为200V,可关断电流为2A的LFCT,其正向电压阻断增益达40～200。Lateral channel field-controlled thyristor (LFCT), which is developed on the basis of vertical channel field-controlled thyristor, has the advantages of high switching speed and compatibility with IC process. In this paper, an LFCT with a forward blocking voltage as high as 200V and a blocking current of 2A is introduced, which is formed by using V-grcove etching instead of gate diffusion. The forward blocking gain for the structure is up to 40-200.

关 键 词：水平沟道 场控器件 晶闸管 LFCT 

分 类 号：TN34[电子电信—物理电子学]