SiOP介质膜及其对InGaAsP/InP量子阱激光结构混合无序的影响  

SiOP Dielectric Film and Its Effects on Band Gap Intermixing of InGaAsP/InP Multi-quantum Wells Laser Structure

作　　者：王永晨[1] 杨格丹[1] 赵杰[1] 李彦[1] 刘明成[1] 

机构地区：[1]天津师范大学物理与电子信息学院,天津300074

出　　处：《天津师范大学学报（自然科学版）》2003年第4期36-39,共4页Journal of Tianjin Normal University：Natural Science Edition

基　　金：国家自然科学基金资助项目(60276013)

摘　　要：用等离子体增强化学沉积(PECVD)方法制备了一种新的电介质薄膜—SiOP,用X射线光电子谱(XPS)和光荧光(PL)研究了膜的结构及膜对1.55μmInGaAsP/InP量子阱激光结构带隙的影响.XPS分析表明,该膜中存在SiO和PO键,P(2p)态键能为134.6eV.PL测量首次获得223.6meV的最大带隙蓝移.该技术在光子集成和光电子集成电路(PIC's,OEIC's)中有广泛的应用前景.A new dielectric film-SiOP was grown on InGaAsP/InP multi-quantum wells (MQW) structure by plasma enhanced chemical vapor deposition (PECVD). The structure of SiOP was investigated by X-ray photo spectroscopy (XPS) and the band gap of MQW laser structure was measured by photoluminescence (PL). The results of XPS showed that there were (Si)O and PO bonds in SiOP film and the energy of P(2p) state was 134.6 eV. The largest band gap blue shift of 223.6 meV was obtained by encapsulated SiOP film following rapid thermal annealing (RTA). This structure could be used in photon integrated circuits (PIC's) and optoelectronic integrated circuits (OEIC's).

关 键 词：SiOP介质膜及 PECVD 量子阱混合QWI 电介质薄膜 激光结构 等离子体增强化学沉积法 光纤通讯 

分 类 号：TN929.11[电子电信—通信与信息系统] TN304.055[电子电信—信息与通信工程]