显微拉曼在硅半导体器件表征中的一些重要应用(英文)  

Some Unique Applications of Raman Microscopy in Si Device Characterization

作　　者：申泽骧 

机构地区：[1]Physics Department, Block S12, Faculty of Science, 2 Science Drive 3, National University of Singapore

出　　处：《光散射学报》2003年第4期268-275,共8页The Journal of Light Scattering

摘　　要：显微拉曼(μRS)在硅半导体器件生产中有许多重要和独特的应用。它可以提供一些非常重要的,于传统表征技术,如四探针法,TEM,AFM,SEM及XRD,相辅助的信息。本文报道μRS在硅器件研究中的一些重要应用。我们成功的应用μRS研究技术上重要的TiSi2C54相在TiS2C40模板上生长的过程,以及NiSi,NiSi2,CoSi,CoSi2的形成过程。运用Si衬底的拉曼信号,超薄硅化物薄膜的厚度(10nm)可以得到非常精确,便利的测量。薄膜的均匀性及晶粒的取向也可以在微米范围内进行评估。利用UV激光在Si及GeSi内极短的穿透深度,UVμRS为下一代IC材料SiGe及器件的研究,特别是应力研究,提供了独特的工具。毫无疑问,μRS将在IC工业中得到更加广泛的应用。We demonstrate that micro-Raman spectroscopy (μRS) is a very useful technique that can be used to study a variety of problems related to Si device fabrication. It provides unique information complementary to those achievable using the conventional techniques, such as FPP (four point probe), TEM, AFM, SEM and XRD. In this talk, several important applications of μRS in the study of silicides and SiGe are described. The growth of the technologically important TiSi_2 C54 phase on TiSi_2 C40 template, as well as the formation of CoSi, CoSi_2, NiSi and NiSi_2 have been successfully monitored and interpreted. Thickness measurement of ultra-thin salicide films down to 10 nm has been accurately performed using attenuation of Si substrate Raman signal at 520 cm^(-1). Using the same Si peak and film uniformity can also be evaluated. The relative Raman intensity ratio variation shows that NiSi grains have different local orientation within micron regime, which provides information supplement those of GAXRD result. Utilizing the extreme short penetration of UV laser in Si and SiGe, UV μRS provides a unique technique in strain characterization of the next generation SiGe thin films (～5nm thick) and devices. Undoubtedly, μRS will feature more prominently in the IC industry.

关 键 词：显微拉曼 硅半导体器件 四探针法 薄膜厚度 应力计算 穿透深度 

分 类 号：TN304.12[电子电信—物理电子学] O433.4[机械工程—光学工程]