单晶硅化物及其应用  

SINGLE-CRYSTAL SILICIDE AND ITS APPLICATIONS

作　　者：武国英[1] 李志宏[1] 郝一龙[1] 陈文茹[1] 

机构地区：[1]北京大学微电子学研究所,100871

出　　处：《微细加工技术》1992年第3期25-45,共21页Microfabrication Technology

摘　　要：本文评述了单晶CoSi_2和NiSi_2的结构特点、各种制备方法、器件应用和发展前景。采用分子束外延(MBE)和“内延”法(Mesotaxy)制备的单晶硅化物质量,电学性能和热稳定性较好。由于首次得到理想的突变的金属——半导体接触,使对金属——半导体接触的理论分析成为可能。硅/单晶硅化物/硅结构在实际应用中非常重要,如单晶硅化物作集电极埋层,能降低集电极串联电阻,克服重掺杂埋层的横扩和自掺杂问题,提高了电路工作速度,减小了器件面积。埋层硅化物也可作为微波传输线的地线,是实现高频集成电路互连的好方法。而采用该结构制备的高速器件——金属基区晶体管(MBT)和穿透基区晶体管(PBT),具有很好的应用前景。The microstructures, fabrications and applications of single-crystal CoSiz and NiSi2 are described in this paper. The structure qualities,'electric properties and thermal stability of single-crystal silicide formed with MBE or Meso-taxy are quite good. Since it is the first time to obtain a ideal metal-semiconductor interface, theoretical analysis of metal-semiconductor barrier become possible. The structures of Si/single-crystal silide/Si are very important for applications in microelectronics. Once buried layer consists of single-crystal silicide instead of heavy-doping silicon in bipolar technologies, the collector series resistance will be reduced, and the lateral diffusion and autodoping coming from n+ buried layer will be avoided, therefore, the cutoff frequency of circuit increases and the device size decreases. Buried silicide layer can also serve as the groundwire in microstrip transmission, which is very suitable for interconnect system in ultrahigh frequency IC. The ultrahigh speed device implemented with above structures, such as metal base transistor (MBT) and permeable base transistor (PBT) , may be very useful in applications.

关 键 词：硅化物 金属-半导体 MBE 内廷 制备 

分 类 号：TN304.12[电子电信—物理电子学]