Al_xGa_(1-x)As选择性湿法氧化技术的研究  

Study on Al_xGa_(1-x)As selective wet oxidation technology

作　　者：黄静[1] 郭霞[1] 渠红伟[1] 廉鹏[1] 董立闽[1] 朱文军[1] 杜金玉[1] 邹德恕[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息和控制工程学院北京市光电子技术实验室,北京100022

出　　处：《红外与激光工程》2003年第6期647-650,共4页Infrared and Laser Engineering

基　　金：国家973计划资助项目(G20000683 3)

摘　　要：详细研究了温度和Al组分与AlxGa1-xAs横向氧化速率的关系,通过分析氧化机制和实验得到的氧化宽度与时间的线性关系,指出在较短时间内的氧化为受AlxGa1-xAs材料与水汽反应速率限制的过程。运用优化的氧化条件,成功制备了氧化孔径为8μm的垂直腔面发射激光器,最大直流光输出功率为3.2mW,激射波长为978nm,工作电流为15mA。The wet oxidation of buried Al_xGa_(1-x)As was investigated. The oxidation character and the dependence of oxidation rate on the temperature and Al content have been studied in details. Through analyzing oxidation mechanism and linear relationship between oxidation length and time, it is educed that the lateral oxidation of Al_xGa_(1-x)As, in relatively short oxidation time, is a reaction rate limit process. Based on the optimized parameters extracted, VCSEL with 8 μm oxidation aperature was produced, whose maximum optical power output is 3.2 mW, wavelength is 978 nm and driving current is 15 mA.

关 键 词：垂直腔面发射激光器 ALXGA1-XAS 氧化 

分 类 号：TN304.05[电子电信—物理电子学]