La_3Ga_5SiO_(14)晶体生长研究  

Study on the Growth of Langasite Crystals

作　　者：蒋春健[1] 胡少勤[1] 吴兆刚[1] 李和新[1] 

机构地区：[1]四川压电与声光技术研究所,重庆400060

出　　处：《压电与声光》2003年第2期133-135,共3页Piezoelectrics & Acoustooptics

摘　　要：报道了用直接法生长新型压电材料La3Ga5SiO14晶体的研究结果。采用化学计量比La3Ga5SiO14多晶料,铂丝引出晶种,中频感应加热生长晶体。对晶体生长的温场及其相应的拉速和转速进行了研究,生长出 50mm×140mm的La3Ga5SiO14晶体,并测试了部分压电性能。In this paper,we have studied the crystal growth of a new piezoelectric material Langasite using the czochralski method.Polycrystal material can be made by melting the well mixed powder of Ga2O3?La2O3 and SiO2 in stoichiometric composition.The seeds by inserting Pthead into the melting in the Pt crucible heated with the RFheating were obtained.We also studied the temperature gradient,translation speed and rotation speed suitable to the crystal growth.The crystals in 50 mm×140 mm size have been grown piezoelectric properties were measured.

关 键 词：La3Ga5SiO14 晶体 直拉法 压电性能 

分 类 号：O772[理学—晶体学]