溶胶-凝胶法制备掺镧钛酸铅铁电薄膜的研究  

La-modified PbTiO_3 Ferroelectric Thin Films Prepared by Sol-Gel Process

作　　者：王根水[1] 赖珍荃[1] 李晓军[2] 孟祥建[1] 孙璟兰[1] 赵强[1] 林铁[1] 褚君浩[1] 胡钧[2] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [2]中国科学院上海原子核研究所纳米生物医药研究室,上海200030

出　　处：《压电与声光》2003年第6期483-485,493,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(60076029)

摘　　要：采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上制备了La掺杂的PbTiO3铁电薄膜(PLT),X-射线衍射测量表明PLT薄膜呈高度(100)择优取向,原子力显微镜和扫描电子显微镜测量表明制备的PLT薄膜的表面平整、结构致密。RT66A测量表明PLT薄膜有优良的铁电特性,500kV/cm的外加电场下,剩余极化为10.6μC/cm2,矫顽电场为55kV/cm。用HP4194A分析了薄膜的介电特性。100kHz时的介电常数为652。La modified PbTiO_3 (PLT) ferroelectric thin films have been grown on Pt/Ti/SiO_2/Si substrates by a Sol-Gel process.The microstructure and morphology of the prepared PLT thin films were investigated via X-ray diffractometry and atomic force microscopy techniques. The cross-sectional morphology of PLT thin films was measured by a field emission scanning electron microscopy.PLT thin films show smooth surface morphology, denser structure.At an applied electric field of 500 kV/cm, The remnant polarization (P_r) and coercive field (E_c) of the PLT thin films were obtained from the P-V loop measurements about 10.6 μC/cm_2 and 55 kV/cm, respectively.At a frequency of 100 kHz, the dielectric constant of PLT thin films was obtained by HP4194A measurement about 652.

关 键 词：溶胶-凝胶法 PLT薄膜 剩余极化 介电常数 

分 类 号：O484[理学—固体物理]