脉冲偏压电弧离子低温沉积TiN硬质薄膜的力学性能  

MECHANICAL PROPERTY OF LOW TEMPERATURE DEPOSITED TIN FILM BY PULSED BIASED ARC ION PLATING

作　　者：黄美东[1] 孙超[1] 林国强[2] 董闯[2] 闻立时[1] 

机构地区：[1]中国科学院金属研究所,沈阳110016 [2]大连理工大学三束实验室,大连116024

出　　处：《金属学报》2003年第5期516-520,共5页Acta Metallurgica Sinica

摘　　要：利用直流和脉冲偏压电弧离子镀技术沉积TiN硬质薄膜,研究了不同偏压下基体的沉积温度、薄膜的表面形貌及力学性能。结果表明,与直流偏压相比,脉冲偏压可以明显降低基体的沉积温度,大大减少薄膜表面的大颗粒污染,改善表面形貌,而薄膜的综合力学性能仍保持良好,说明利用脉冲偏压技术是实现电弧离子镀低温沉积的有效途径。TiN hard coatings were prepared by arc ion plating (AIP) with dc and pulsed biases, respectively. Systematic examinations and comparisons were executed on the temperature of substrates, the surface morphology and mechanical properties of the films. The results show that the temperatures of substrates decrease obviously when pulsed bias is used instead of dc bias, while the morphologies and properties of the obtained films are improved. Therefore it is a valid way to realize low temperature deposition of AIP by using pulsed biases.

关 键 词：电弧离子镀 低温沉积 脉冲偏压  TIN薄膜 

分 类 号：TB43[一般工业技术] TG115.22[金属学及工艺—物理冶金]