GaN_(1-x)P_x三元合金的光学与结构特性  

Optical and Structural Properties of GaN_(1-x)P_x Ternary Alloys

作　　者：陈敦军[1] 张开骁[1] 沈波[1] 邓咏桢[1] 濮林[1] 张荣[1] 施毅[1] 郑有炓[1] 

机构地区：[1]南京大学物理系,南京210093

出　　处：《光学学报》2004年第1期137-139,共3页Acta Optica Sinica

基　　金：国家重点基础研究专项 (2 0 0 0 0 6 83);国家自然科学基金(6 0 136 0 2 0 ;6 0 2 76 0 31;6 0 2 0 6 0 0 1);国家高新技术研究发展计划 (2 0 0 2AA30 5 30 4 )资助课题

摘　　要：对采用金属有机化学气相淀积 (MOCVD)技术生长的GaN1-xPx 三元合金进行了低温光致发光 (PL)和X射线衍射 (XRD)测试分析 .与来自GaN层的带边发射相比 ,P的摩尔分数比为 0 .0 3,0 .11和 0 .15的GaN1-xPx 的光致发光峰分别呈现出了 73meV ,78meV和 10 0meV的红移 ,文中将这种红移归因于GaN1-xPx 合金具有大的带隙能量弯曲系数。X射线衍射结果表明GaN1-xPx 三元合金仍为六方结构晶体 ,且随着P组份比的增加 ,GaN1-xPx合金的 (0 0 0 2 )衍射峰逐渐向小角度方向移动 ,即晶格常量变大 ,同时 ,(0 0 0 2 )衍射峰谱线不断宽化 ,说明由于替位式P原子的不规则分布以及部分间隙P原子的影响造成了GaN1-xPx 样品的晶格畸变。在GaN1-xPx 的光致发光谱及X射线衍射谱中均未观测到相应的有关GaP的峰 ,表明所生长的高P含量的GaN1-xPx 三元合金没有产生明显的相分离。X-ray diffraction (XRD) and Photoluminescence (PL) spectra for a series of high phosphorus compositional GaN_ 1-x P_ x films grown by means of light-radiation heating,low-pressure metal-organic chemical vapor deposition have been investigated. Photoluminescence spectra for GaN_ 1-x P_ x layers with P/N composition ratios of 15%,11% and 3% show the red-shifts of 100 meV,78 meV and 73 meV,respectively,from that of GaN due to a large bowing of band gap energy. X-ray diffraction results show that (0002) peaks of GaN_ 1-x P_ x samples have shifted to smaller angles compared with that of an undoped GaN sample,and the linewidth of the (0002) peak becomes broader with increasing P composition in the samples,indicating that the crystal lattice distortion is produced due to the P incorporation into the GaN host lattice. No peak related to GaP is observed in X-ray diffraction and photoluminescence spectra,which indicates that the phase separation between GaN and GaP has not occurred in our GaN_ 1-x P_ x samples.

关 键 词：光学材料 三元合金 氮化镓 红移现象 X射线衍射 光致发光 晶格畸变 半导体光电材料 

分 类 号：TN304.2[电子电信—物理电子学]