压控式毫米波MEMS移相器的可动薄膜  

Study of MEMS RF Switches Array Membrane——Millimeter Wave Phase Shifter

作　　者：郭方敏[1] 朱自强[1] 赖宗声[1] 朱守正[1] 朱荣锦[1] 忻佩胜[1] 范忠[1] 贾铭[1] 程知群[2] 杨根庆[2] 

机构地区：[1]华东师范大学信息科学和技术学院,上海200062 [2]中国科学院上海微系统与信息技术研究所,传感技术国家重点开放实验室,上海200050

出　　处：《Journal of Semiconductors》2003年第6期631-636,共6页半导体学报（英文版）

基　　金：国家重点基础研究发展规划 ( No.G19990 3310 5 );国家杰出青年基金 (批准号 :6992 5 40 9);上海 -应用材料研究与发展基金 ( No.0 0 0 4);上海市科学技术发展基金 ( Nos.15 2 110 66;0 12 2 610 2 8)资助项目~~

摘　　要：介绍了采用金、铝硅合金等金属分别用作压控式 RF MEMS开关阵列——移相器的可动薄膜 ,实验表明金的延展性比较好 ,弹性比铝硅合金稍差 ,启动电压较高 .相比较含硅 4%的轻质量铝硅合金具有较低的启动电压( 5 V ) ,用该弹性膜制备的 2 1桥压控式开关阵列——毫米波移相器的下拉电压为 2 0 V时 ,相移量可达到 3 70°/3 .5 mm以上 ( 3 5 GHz) ,并能在不同的控制电压下根据要求改变相移量 ,其传输损耗为 5 5～ 90°/ d B。The simple design and fabrication of MEMS millimeter wave phase shifters are presented.They consist of a coplanar wave-guide (CPW) transmission line periodically loaded with 8～32 metal bridges,functioning as capacitive switches.Every switching element consists of a thin metallic membrane actuated when being applied bias.Several metallic bridges and shapes are analyzed and calculated by ANSYS software.The experiment results indicate that compared with Al 0.96Si 0.04 alloy gild membrane has better ductility,lower elasticity and higher pulling-down voltage.Remarkable phase shifter performances are observed by Al 0.96Si 0.04 alloy membrane.The phase shifter reaches to 372°/3.5mm under 20V bias at 35GHz,and better phase shifter performance (100°/mm) and with an insertion loss (S 21) of about 55～90°/dB from 30～40GHz.The experimental results also indicate that Al 0.96Si 0.04 alloy has lower actuation voltage (5V) and gold has higher actuation voltage (45V);but the transfers loss of Al 0.96Si 0.04 alloy is higher than that of gold.

关 键 词：RF MEMS开关 移相器 下拉电压 铝硅合金 

分 类 号：TN822.4[电子电信—信息与通信工程]