Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)  

无坑洞n-3C-SiC/p-Si(100)的LPCVD外延生长及其异质结构特性(英文)

作　　者：孙国胜[1] 孙艳玲[1] 王雷[1] 赵万顺[1] 罗木昌[1] 张永兴[1] 曾一平[1] 李晋闽[1] 林兰英[1] 

机构地区：[1]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2003年第6期567-573,共7页半导体学报（英文版）

基　　金：国家重点基础研究发展规划 ( No.G2 0 0 0 0 683);国家高技术研究发展计划 ( No.2 0 0 1AA3110 90 )资助项目~~

摘　　要：Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown onφ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD).The initial stage of carbonization and the surface morphology of carbonization layers of Si (100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM).It is shown that the optimized carbonization temperature for the growth of voids-free 3C-SiC on Si (100) substrates is 1100℃.The electrical properties of SiC layers are characterized using Van der Pauw method.The I-V,C-V,and the temperature dependence of I-V characteristics in n-3C-SiC/p-Si heterojunctions with AuGeNi and Al electrical pads are investigated.It is shown that the maximum reverse breakdown voltage of the n-3C-SiC/p-Si heterojunction diodes reaches to 220V at room temperature.These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).在 MBE/CVD高真空系统上 ,利用低压化学气相淀积 ( L PCVD)方法在直径为 5 0 mm的单晶 Si( 10 0 )衬底上生长出了高取向无坑洞的晶态立方相碳化硅 ( 3 C- Si C)外延材料 ,利用反射高能电子衍射 ( RHEED)和扫描电镜( SEM)技术详细研究了 Si衬底的碳化过程和碳化层的表面形貌 ,获得了制备无坑洞 3 C- Si C/Si的优化碳化条件 ,采用霍尔 ( Hall)测试等技术研究了外延材料的电学特性 ,研究了 n- 3 C- Si C/p- Si异质结的 I- V、C- V特性及 I- V特性对温度的依赖关系 .室温下 n- 3 C- Si C/p- Si异质结二极管的最大反向击穿电压达到 2 2 0 V,该 n- 3 C- Si C/p- Si异质结构可用于制备宽带隙发射极 Si C/Si

关 键 词：LPCVD voids-free n-3C-SiC/p-Si(100) heterojunction characteristics 

分 类 号：TN304.054[电子电信—物理电子学]