n-InP/Fe^(3+),Fe^(2+)界面在小信号电流阶跃下的暂态行为  

TRANSIENT BEHAVIOR OF n-InP/Fe^(3+),Fe^(2+) INTERFACE USING SMALL CURRENT STEP

作　　者：钱道荪[1] 赵俊[1] 

机构地区：[1]上海交通大学应用化学系,上海200030

出　　处：《物理化学学报》1992年第2期202-206,共5页Acta Physico-Chimica Sinica

摘　　要：应用小信号电流阶跃法研究了光照下n-InP/Fe^(3+),Fe^(2+)界面,此时电位变化符合双指数规律,这和理论推导是一致的。在时间很短时,电位与时间成线性关系,从直线斜率可求出空间电荷区电容。In this paper the transient behavior of n-InP semiconductor electrode in Fe^(3+)/Fe^(2+)solution using current step method is studied. From the equivalent circuit of then-InP electrode under irradiation, a theoretical model for the change of photopoten-tial is derived in the presence of a small signal. The results of the experimentsconfirm the derivation. On the basis of the experiments and the theoretical modelwe also develop a method for measuring the capacitance of the space charge layer(C_(sc)). The observation of the influences of various light intensities is studied also.

关 键 词：磷化铟 半导体电极 光电化学 

分 类 号：O614.372[理学—无机化学]