AFM电场诱导氧化加工作用的分析  

Analysis of the process of oxidation induced by electric filed with atomic force microscope

作　　者：胡晓东[1] 郭彤[1] 傅星[1] 胡小唐[1] 

机构地区：[1]天津大学精密测试技术及仪器国家重点实验室,天津300072

出　　处：《电子显微学报》2003年第3期206-209,共4页Journal of Chinese Electron Microscopy Society

基　　金：教育部重点科学技术项目 (No.0 2 0 43 )

摘　　要：纳米加工技术是纳米器件研究的重要基础条件 ,纳米氧化结构则是纳米器件的重要组成部分。为了深化对AFM电场诱导氧化加工机理的理解 ,本文对Si表面的电场诱导氧化作用进行了实验研究 ,包括探针与样品之间实际电压的监测、不同掺杂Si材料加工门槛电压的分析及探针扫描速率对氧化物高度的影响。实验分析表明 。The nanofabrication is one promising method for nanodevice manufacturing, and nano scale oxide structures are important for the formation of nanodevice. For better understanding the mechanism of oxidation induced by electric filed with AFM, studies of field induced oxidation on Si surface were carried out. Experiments include monitoring the fact voltage between the tip and sample, the analysis of threshold voltages of different doped Si, and the relationship between the height of oxide lines and the velocity of tip displacement. The results show the charge and discharge process in the formation of oxide is an important factor for threshold voltages and the nonlinear relationship between the height of the oxide lines and the displacement velocity of the tip.

关 键 词：原子力显微镜 AFM 纳米加工技术 纳米器件 电场诱导氧化 门槛电压 氧化结构 氢钝化硅 

分 类 号：TN305[电子电信—物理电子学]