掺杂浓度对p-GaAs的带隙变窄的影响  

THE EFFECT OF DOPING CONCENTRATION ON BAND-GAP NARROWING OF p-TYPE GaAs

作　　者：程文芹[1] 梅笑冰[1] 刘双[1] 刘玉龙[1] 李永康[1] 周均铭[1] 

机构地区：[1]中国科学院物理研究所,北京100080

出　　处：《物理学报》1992年第6期1032-1035,共4页Acta Physica Sinica

摘　　要：用光致荧光的方法对分子束外延生长的(110)方向的掺Be的GaAs带隙变窄随掺杂浓度的变化进行研究。结果表明:对于P-GaAs,带隙变窄主要是价带上移造成的,杂质能级(带)相对导带的位置不变。因此,电离能随着掺杂浓度的增加而减小。The band-gap narrowing of p-type GaAs as a function of doping concentrafion has been investigated by photoluminescence spectroscopy on samples grown by molecular beam epitaxy on (110) semi-insulating GaAs. It was first found that the band-gap narrowing of p-type GaAs comes from the moving up of valence band, the location of dopant level (band) remains unchanged relative to conduction band, and the ionization energy decreases with the increase of doping concentration.

关 键 词：掺杂 P-GaAs 带隙 浓度 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学]