热环境对微机械多晶硅薄膜电阻电特性的影响  

Influence of Thermal Environment on Electrical Properties of Micromachined Polysilicon Thin Film Resistor

作　　者：董良[1] 岳瑞峰[1] 刘理天[1] 徐扬[1] 李志坚[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《固体电子学研究与进展》2003年第4期508-513,共6页Research & Progress of SSE

摘　　要：将 CMOS工艺和微机械加工技术相结合 ,制作出悬空式微桥支撑、薄膜支撑以及无悬空结构的微机械多晶硅薄膜电阻。通过对样品的电阻温度系数 ( TCR)和电流 ( I) -电压 ( V)特性的测量 ,研究了热隔离程度。Micromachined polysilicon thin film resistors supported by microbridge and by thin film have been designed and fabr icated by CMOS process and micromachining technology. After measuring the temper ature coefficient of resistance(TCR) and I-V characteristics, the influ ence of thermal environment, such as the degree of thermal insulation and the pressure o f atmosphere, on electrical properties of these resistors is investigated and di scussed.

关 键 词：热环境 微机械多晶硅薄膜电阻 CMOS工艺 微机械加工技术 电阻温度系数 电学特性 

分 类 号：TM544[电气工程—电器]